Method of manufacturing member for thin-film formation apparatus and the member for the apparatus

ABSTRACT

A technique to prevent peeling of deposits formed on the surface of the inner walls of the thin-film formation apparatus and the members inside the apparatus and to suppress particle production without contamination of the inside of the apparatus. A member for a thin-film formation apparatus having inner walls and a method for manufacturing the member is provided. A plurality of unevenness is provided on at least a portion of the surface of the member and the inner walls on which unnecessary thin films are deposited. The surfaces are subjected to masking, and then, etching processing to form the plurality of unevenness. After the etching processing the masking is removed.

CROSS REFERENCE TO RELATED APPLICATION

The present application is a continuation of co-pending application Ser.No. 09/085,133 filed on May 26, 1998 now U.S. Pat. No. 6,045,665.

FIELD OF THE INVENTION

The present invention relates to a member and a method of manufacturinga member for a thin-film formation apparatus, and more particularly, thepresent invention relates to a member and thin-film formation apparatuswhich, in use, reduces particle production during sputtering processing.

DESCRIPTION OF THE PRIOR ART

In recent years, thin-film formation techniques using vapor-phase growthhas been extensively employed for electrodes of integrated circuits,thin films for diffusion barrier, magnetic thin films for magneticrecording media, Indium Tin Oxide (ITO) transparent conductive films ofliquids crystals displays, etc. A sputtering method, one of thevapor-phase growth methods, has been widely employed, since it can beapplied to a wide range of materials and its film formation control isrelatively easy.

This well known sputtering method forms thin films by making chargedparticles impinge against a sputtering target, expelling the particlesof a substance constituting the sputtering target therefrom with theimpinging force, and depositing these particles on a substrate such as awafer placed facing the target.

However, upon formation of thin films by vapor phase growth such assputtering described above, a problem of particle production hasattracted great attention.

These particles will be explained by exemplifying those derived from atarget in the sputtering method. When a target is subjected tosputtering, thin films are deposited everywhere, such as, the innerwalls of the thin-film formation apparatus, the members inside theapparatus, and on a substrate. Flakes peeling from the members insidethe thin-film formation apparatus scatter and are directly deposited onthe substrate surface. This is considered to be one of the causes ofparticle production.

In addition, on the target surface, foreign substances called nodules,which are considered to be produced from flakes peeling from the sidesurface of the target and the members inside the thin-film formationapparatus, serve as cores and grow to a size of several micrometers indiameter. When these nodules have grown to a certain level, they arebroken, scatter, and are deposited on the surface of the substrate. Thisis also one of the causes of particle production.

When those particles mentioned above are deposited on fine wirings onthe substrate, problems such as short-circuiting and, on the contrary,breaking of the wires are caused, for example, in the case of LargeScale Integration (LSI).

In recent years, since LSI semiconductor devices have been highlyintegrated (16 M bits, 63 M bits, and further 254 M bits, etc.) and havebecome finer, for example, wiring width (rule) has been reduced to 0.25μm or less, the above-mentioned problems such as breaking of wires andshort-circuiting have occurred more frequently. Thus, the problem ofparticle production has become significant as electronic device circuitshave become more highly integrated and fine.

As mentioned above, as one of the causes of particle production, aproblem of deposition of thin films on the regions, where film formationis essentially not required, of the inner walls of the film formationapparatus or the members inside the apparatus has attracted greatattention. Specifically, deposition on peripheral parts of a substrate,shields, backing plates, shutters, targets, and supporting devicesthereof can be mentioned.

Since thin films peel from the site, where unnecessary thin films aredeposited, and scatter to cause particle production as mentioned above,a technique in which the inner walls of the film formation apparatus,peripheral parts of a substrate, shields, backing plates, shutters,targets and supporting devices thereof are periodically cleaned orexchanged before these deposits become thick and peel has been adopted.

In addition, in order to prevent thin films once deposited from peelingand scattering, at sites of a member (equipment) on which a great amountof thin films are deposited, sprayed metal coatings have been formed(See Japanese Patent Laid-Open Nos. 61-56227 and 8-176816) or depositshave been captured by physical surface roughing treatment such as blasttreatment. (See Japanese Patent Laid-Open No. 62-142758).

In addition, since the above-mentioned operations were considered toreduce operation efficiency of thin-film formation, a removableanti-deposition plate to capture deposits was designed in order toprevent deposits from peeling and scattering, and further improvementsof the plate were made by changing a thermal expansion coefficient ofthe plate and by subjecting the plate surface to sand-blast treatmentand hair-line treatment. (See Japanese Patent Laid-Open Nos. 63-162861,2-285067, and 3-138354).

Among these, so-called PARTICLE GETTER (Trade Name) with special surfacetreatment was epoch-making in efficiently preventing particle productionunder the technological level of that time. (See Japanese PatentLaid-Open Nos. 1-316456 and 3-87357).

Recently, however, aspect ratios of contact holes and via holes haveincreased to 3 or more due to a tendency toward fining of wiring rulesas mentioned above and it has thus become difficult to fill these holesby conventional sputtering methods. Therefore, highly directionalsputtering methods such as collimation sputtering and long-throw haveappeared, which require making power twice as large as that requiredconventionally.

As a result, the density and dispersion of plasma formed duringsputtering have been increased so that the surface of shields,collimators, targets, etc., in the vicinity of plasma are simultaneouslysubjected to sputtering in addition to deposition of thin films.

When the sprayed metal coatings or blast treatment is carried outdirectly on the inner walls of apparatus or equipment, oranti-deposition plate, as measures to capture the above deposits toprevent their peeling and scattering, the following problems occur:sprayed metal coatings themselves, and residual blast material in thecase of blast treatment, are sputtered especially in the early stage ofsputtering to contaminate the whole inside of the sputtering apparatus.

Even when the anti-deposition plate was used alone, it had a thicknessof its own to limit place for installation. In addition, when sputteringmaking power was remarkably increased, problems similar to those forsprayed metal coatings and blast-processed material occurred.

As described above, the problem of particle production has not beensolved and the measures which have been adopted to prevent particleproduction, such as sprayed metal coatings and blast treatment, andanti-deposition plates having undergone these processings havethemselves caused the serious problem of contaminating thin films.

OBJECTS OF THE INVENTION

Therefore, an object of the present invention is to provide a method ofmanufacturing a member of a thin-film formation apparatus whichefficiently prevents peeling of deposits formed on the surface of theinner walls of the thin-film formation apparatus and members inside theapparatus and suppresses particle production without contaminating theinside of the thin-film formation apparatus.

A further object of the present invention is to provide a member for athin-film formation apparatus which prevents peeling of deposits fromthe surface of the member.

SUMMARY OF THE INVENTION

According to one aspect of the present invention, a method is providedfor manufacturing a member for a thin-film formation apparatus havinginner walls. The member and inner walls each have surfaces on whichunnecessary thin films are deposited during sputtering. The methodincludes subjecting at least a portion of the surfaces to masking, andafter masking, subjecting the portion of the surfaces to etchingprocessing. The masking is removed after the etching processing so thatthe surface is provided with an unevenness.

According to another aspect of the present invention, a member isprovided for a thin-film formation apparatus. The member comprises asurface having a plurality of concave and convex parts formed on atleast a portion of the surface by etching processing. The portion of thesurface subjected to etching processing has a center line surfaceroughness (Ra) of about 5 to about less than 100 μm.

Preferably, one of the plurality of concave parts and the plurality ofconvex parts is arranged regularly at constant intervals. Also,preferably one of the plurality of concave parts and one of theplurality of convex parts is formed about 1 to about 100,000 per unitarea(1 mm²)on the portion of the surface which has been subjected toetching processing. In addition, each of the concave parts is preferablya recess formed in the surface, the recesses having an average diameter;and each of the convex parts is preferably located adjacent to at leastone concave part. The average diameter of the recesses is about 3 toabout 1000 μm.

Finally, preferably the surfaces of the inner walls and the member arecomposed of a metal or an alloy, and have a sum of detection areas ofcontaminant elements other than gas elements such as oxygen, nitrogen,and carbon. The sum of detection areas of contaminant elements of themember as measured by Electron Proble Microanalyzer (EPMA) analysis ispreferably less than about 0.1%.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A, 1B, 1C and 1D are schematic illustrations showing an exampleof etching processing; and

FIGS. 2A and 2B show schematic plan and sectional views, respectively,of formation of unevenness on the processed material.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In order to achieve the above and other objects, the inventors of thepresent invention devoted themselves in research and obtained thefollowing results.

Although relatively soft metals such as nickel and aluminum whichreadily adhere to objects to be sprayed and can absorb stress ofdeposits by sputtering have been employed for conventional sprayed metalcoatings, it was found that all metal materials used for spray coatinghad low level of purity, about 2N, and thus directly causedcontamination when sprayed onto a member for a thin-film formationapparatus, etc.

It was also found that, blast materials generally employed in blasttreatment, such as alumina and silicone carbide, bit into the materialto be subjected to blast treatment and remained on the surface, sincethey were massive or had a needle-like shape. Such foreign matters arethus sputtered in the early phase of thin-film formation and extensivelycontaminate the inside of the thin-film formation apparatus and in theworst case further contaminate sputtering thin-films on the substrate.

In order to solve the above-mentioned problems and to realize surfaceroughing without contamination, etching processing, a chemical method,has been attempted instead of conventional surface-roughing processingby physical methods. As a result, it was found that sufficient adhesivestrength of deposits could be attained by making the surface rough whilemaintaining the cleanness of the surface by means of etching.

It was also found that adequate surface roughness was achieved by firstmasking a part of the surface before etching processing the wholesurface in order to control the sites to be etched and the depths of theetched sites. The cleanness of the surface is maintained by removing themasking material by washing it after etching. It was also found that theadhesive strength of deposits on the etched surface which was masked asdescribed above are stronger than that achieved on surfaces which havemerely been etching over the whole surface without any masking.

An idea that the inner walls of the thin-film formation apparatus andequipment (member) positioned inside the apparatus are subjected toetching processing so as to form unevenness in order to prevent thinfilms deposited on the members, etc. from peeling and scattering andthereby to prevent particle production has not yet been present and wasfound to be novel and quite effective.

Unevenness formed on the inner walls of the thin-film formationapparatus and equipment (members) placed inside the apparatus by etchingcan remarkably increase surface area, decrease deposits per unit area,and remarkably reduce splitting and peeling of deposits by suppressingan elevation in internal stress accompanying an increase in deposits.

The center line surface roughness (Ra) of the surface having undergoneetching processing of the uneven parts formed by etching processing wasset to be 5 to less than 100 μm, in order to increase surface arearemarkably and to provide concave or convex parts with sufficientadhesive strength to deposits by an anchor effect.

When the center line surface roughness is less than 5 μm, the adhesivestrength is insufficient. On the other hand, when the center linesurface roughness is 100 μm or more, thin films are deposited only onthe side surface of the concave or convex parts facing the plasma side,and the amount of deposits decrease or become zero on the opposite side.In such cases, deposits became uneven as a whole and an anchor effectwas not effected. Thus the concave and convex parts readily causedpeeling.

From above, in order to provide the concave or convex parts withsufficient adhesive strength and an anchoring effect, it is desirablethat the intervals of the concave or convex parts formed by etchingprocessing are constant and that they are arranged regularly. It canincrease the possibility to obtain homogeneous deposition of thin filmsand allow the adhesive strength due to an anchor effect to be exertedmore effectively.

It was found that the adhesibility was improved as compared with aconventional roughing processing by blast, since the surface subjectedto surface roughing by said masking and etching is clean and nocontamination layer is present in the interface between the deposit andthe processed surface, as a result of a secondary effect.

Masking materials may be those, which, of course, have an anti-etchingproperty and are easily removed by washing after etching processing, andare not particularly limited. For example, photosetting resistsgenerally used for formation of electronic circuits can be employed.

An example is shown in the schematic illustrations of FIGS. 1A, 1B, 1Cand 1D. FIG. 1A represents a sectional view of processed material beforeprocessing; FIG. 1B represents a sectional view of a processed materialto which resist has been applied; FIG. 1C represents a sectional view ofthe processed material, a part of which has been removed by etchingprocessing; and FIG. 1D represents a sectional view of the processedmaterial from which resist has been removed after etching processing.FIGS. 1A to 1D are arranged in the order of steps of the method.

As shown in FIGS. 1A to 1D, for example, on a titanium (Ti) processedmaterial 1, photosetting resist 2 is applied evenly on the surface to beroughed, and a part of the resist to be set is exposed to light to set.Then, the resist 2 on the part which has been set is removed by washing.

Then, according to the materials of foundations, that is, processedmaterial 1 and resist material 2, an etching material such as an acidicaqueous solution, alkaline aqueous solution, or reactive gas isselected. The processed material 1 on which the resist 2 has beenapplied is placed in the etching atmosphere selected to proceed etchingprocessing on parts 3 other than the parts where the resist 2 remainedto form unevenness on the surface.

Surface roughness is controlled by the size of each part to be masked,the number of concave or convex parts per unit area, the composition ofetching processing materials used, and the reaction time.

FIGS. 2A and 2B show schematic illustrations (copies of a photo) of aplan view and a sectional view, respectively, of a processed material onwhich unevenness was formed by etching processing. As shown in FIGS. 2Aand 2B, concave or convex parts formed by etching processing arearranged regularly at constant intervals.

Metals or alloys with high purity are used as Material constituting themember of the part, where unnecessary thin films are deposited on theinner walls of the thin-film formation apparatus or the member insidethe apparatus. Therefore, it is necessary that contaminants, such asalumina and silicon carbide remaining due to a low purity sprayedcoating, and blast treatment material that have been preformedconventionally, are not present.

From above, the sum of detection areas of contaminant elements otherthan light elements (refer to as gas components as a whole) such asoxygen, nitrogen, and carbon obtained by EPMA (electron probemicroanalyzer) analysis must be less than 0.1% per unit area of themetal or alloy material. When the amount of contaminants is reduced tosuch a level, deposition of contaminants on the substrate during filmformation is remarkably reduced.

Although the center line surface roughness (Ra) of the unevennesslargely affects the prevention of particle production, it is alsoimportant to control the number of unevenness per unit area and the size(diameter) of each unevenness in order to achieve a sufficient anchoreffect in capturing substances scattering to the inner walls or membersof the thin-film formation apparatus.

As for the number of unevenness, when the number of concave or convexparts to fix deposits is less than 1/mm², a sufficient anchor effectcannot be attained. On the other hand, when the number exceeds100,000/mm², the anchoring effect is reduced because the intervals amongthe unevenness are shrunk, and shadow parts appear in the bottoms of theconcave parts or among the convex parts on the surface which has beenroughed to a surface roughness (Ra) of 5 μm or more as mentioned aboveand parts on which scattered substances are not deposited. Therefore, itis necessary that 1 to 100,000 concave or convex parts per unit area (1mm²) are formed on the surface processed with etching and it isdesirable to adjust the number in this range.

In addition, in order to exert a sufficient anchor effect, the averagediameter of the holes, or recesses, of the concave parts or the averagediameter of the top surfaces of the convex parts is inevitably limited.“Diameter” used herein is an average diameter of the full length of thehole of concave parts or the top surfaces of the convex parts formed byetching. In a more strict manner, it means, for the concave parts, anaverage diameter of the parts with the maximum diameter of the entranceof the holes, and for the convex parts, an average diameter of thegenerally almost flat top surfaces remaining after etching processing.

For the shapes of the holes of the concave parts or the top surface ofthe convex parts observed from the above, that is, planar shapes,various shapes such as round, oval, rectangular may be selected.Although shapes slightly different from the intended shapes may beobtained by etching processing, these variations are included, providedthat their average diameters are within the range mentioned above.

When the uneven part as mentioned above is considered to be oval, planarshapes in which the long-axis diameter is significantly different fromthe short-axis must be avoided, if possible, since parts withoutdeposition or uneven deposits tend to occur in parts with a narrowdiameter, resulting in anisotrophy in anti-peeling strength. Therefore,shapes with an even diameter, such as round and square, are desirablefor holes of concave parts and top surfaces of convex parts.

When the number of uneven parts per unit area is defined, the averagediameter of the holes of the respective concave parts or the top surfaceof the respective convex parts must be 3 to 1,000 μm and it is desirableto adjust the diameter in this range.

As in the case of the number of uneven parts, when a size of each unevenpart is less than 3 μm and the surface roughness (Ra) is 5 μm or more,parts without deposition appear in the bottoms of the concave parts ofthe roughed surface, and the protruded parts which fix the depositionmembrane has insufficient strength and thus a sufficient anchor effectis not exerted on the convex parts.

Although formation of unevenness by etching processing has beendescribed, a similar anchor effect to capture scattering substances isobtained, when only concave parts or only convex parts are formed on thesurface of the members, etc., by masking and etching. Therefore, concaveand convex can be optionally selected, as required.

EXAMPLES

Titanium shields (members) subjected to various surface-roughingtreatments (to form uneven parts) shown in Table 1, Examples accordingto the present invention, were placed in a sputtering apparatus. In theExamples, the concave and convex parts were arranged regularly atconstant intervals.

A titanium target for sputtering was employed to carry out reactivesputtering in a nitrogen gas atmosphere to form titanium nitride (TiN)thin films on a substrate When about 10 μm of TiN was deposited on saidtitanium shield, sputtering was terminated. The titanium shield wasremoved from the sputtering apparatus and subjected to a peeling testusing a scotch tape. In order to determine whether or not there wasdifferences according to the types of unevenness formed by etching, thesame number of specimens were prepared for different types of unevennessand subjected to the peeling test. The size of unevenness shown in Table1 is an average diameter of the holes of the concave parts or that ofthe top surfaces of the convex parts as explained above.

At the same time, the presence of contamination of TiN thin film formedon the substrate and derived from said titanium shield caused by surfaceroughing was analyzed by SIMS (secondary ion mass spectrophotometry).For the titanium shield (member), the sum of detection areas ofcontaminant elements other than gas components such as oxygen, nitrogen,and carbon previously obtained by EPMA analysis was measured. EPMA-8705manufactured by Shimadzu was used as the EPMA analyzer under thefollowing measurement conditions: acceleration voltage: 15 KV; probediameter: 1 μm; and sample current: 0.04 μA.

The results are summarized in Table 1.

TABLE 1 EPMA Analysis Size of No. Of Results Ra (Detection UnevennessUnevenness Peeling of SIMS (μm) area ratio) (Diameter in μm) (No./mm²)Test Analysis Example 1 5 Less than 0.1% 5 36000 No Not peeling detectedExample 2 7 Less than 0.1% 50 360 No Not peeling detected Example 3 10Less than 0.1% 150 36 No Not peeling detected Example 4 10 Less than0.1% 250 8 No Not peeling detected Example 5 30 Less than 0.1% 800 1 NoNot peeling detected Example 6 30 Less than 0.1% 5 20000 No Not peelingdetected Example 7 50 Less than 0.1% 50 200 No Not peeling detectedExample 8 50 Less than 0.1% 150 22 No Not peeling detected Example 9 90Less than 0.1% 250 8 No Not peeling detected Example 10 90 Less than0.1% 800 1 No Not peeling detected

Comparative Examples

As comparative examples, titanium shields (members) subjected to varioussurface roughing treatments shown in Table 2 were placed to formtitanium nitride (TiN) thin film on a substrate by sputtering in similarconditions. When about 10 μm of TiN was deposited on the titaniumshield, sputtering was terminated. The titanium shield was removed fromthe sputtering apparatus and subjected to the peeling test using scotchtape.

As in the aforementioned Examples, the presence of contamination of TiNthin film formed on the substrate derived from said titanium shieldcause by surface roughing was analyzed by SIMS (secondary ion massspectrophotometry). For the titanium shield (member), the sum ofdetection areas of contaminant elements other than gas components suchas oxygen, nitrogen, and carbon previously obtained by EPMA analysis wasmeasured. EPMA analysis was conducted under conditions similar to thosein the aforementioned Examples.

The results are summarized in Table 2. In Table 2, for those on which nounevenness was formed by etching processing, that is, those which weresubjected to grinding with a grinding stone or those with sprayed metalcoating, the processing conducted is described in the parentheses,instead of the size of evenness (diameter in μm) and the number ofevenness (number/mm²).

The size of unevenness here represents, as for Table 1, an averagediameter of the holes of the concave parts or the average diameter ofthe top surfaces of the convex parts as described above.

TABLE 2 EPMA Analysis Size of No. Of Results Ra (Detection UnevennessUnevenness Peeling of SIMS (μm) area ratio) (Diameter in μm) (No./mm²)Test Analysis Comparative 4 Less than 0.1% 250 8 Peeling Not Example 1detected Comparative 150 Less than 0.1% 250 8 Peeling Not Example 2detected Comparative 1  0.1 Si (Grinding with Si grinding Peeling SiExample 3 stone) detected Comparative 2 0.05 Si (Grinding with Sigrinding Peeling Not Example 4 stone and soft etching) detectedComparative 5   2 Si (SiC blast surface roughing) Peeling Si Example 5detected Comparative 20 100 Al (Al spray coating) No Al Example 6Peeling detected Comparative 25 Less than 0.1% 800 0.5 Peeling NotExample 7 detected Comparative 25 Less than 0.1% 1100 0.7 Peeling NotExample 8 detected Comparative 5 Less than 0.1% 2.5 120000 Peeling NotExample 9 detected Comparative 5 Less than 0.1% 2 100000 Peeling NotExample 10 detected

Turning now to the Examples according to the present invention, they areexplained by comparing with the above Comparative Examples.

As shown in Table 1, the sum of detection areas of contaminant elementsother than gas components such as oxygen, nitrogen, and carbon obtainedby EPMA analysis of the titanium shields (members) was less than 0.1%for all Examples 1-10. As a result of SIMS (secondary ionic massspectrophotometry) analysis concerning the presence of contamination ofTiN thin film formed on the substrate due to surface roughing derivedfrom the titanium shield, no contaminant elements were detected.

On the other hand, as shown in Comparative Examples 3, 5, and 6, in thetitanium shield subjected to grinding with an Si grinding stone, blastroughing with SiC, and spraying with an Al coating, respectively, theirmajor materials, Si and Al, were detected by EPMA analysis. The abovematerials, Si and Al, were also detected in the substrates by SIMSanalysis, indicating contamination with these materials aftersputtering. In other words, it has become clear that a grinding stone,blast surface roughing, and spray metal coating cause contamination ofsubstrates and are not preferable.

In Comparative Example 4, no contaminants were detected on thesubstrate, since soft-etching processing was conducted followinggrinding with an Si grinding stone.

As for the results of the peeling test, for Examples 1-10, in which thecenter line surface roughness (Ra) of the surface subjected to etchingprocessing was in a range of not less than 5 μm to less than 100 μm, thesize of the unevenness (diameter is μm) was 3 to 1,000, and the numberof unevenness (number/mm²) was 1 to 100,000, no peeling occurred in thepeeling test.

On the other hand, all Comparative Examples 1-10 except for ComparativeExample 6, peeling readily occurred in the peeling test. As describedabove, Comparative Example 6 cannot be employed although no peelingoccurred, since sprayed Al coating served as a contaminant. Especially,in Comparative Examples 3 and 5, bad results were obtained due to thepresence of contaminants in addition to easy peeling.

For the Examples according to the present invention, the same number ofsamples were tested by changing the type of unevenness formed by etchingprocessing. There was no difference in peelability according to the typeof unevenness in the range of conditions for unevenness according to thepresent invention.

In the Examples according to the present invention, as shown bycomparison with the Comparative Examples, since no contaminants wereobserved on the inner walls and inner equipment of the thin-filmformation apparatus attributable to blast materials or spray coatingmaterials conventionally applied for surface roughing, and peeling ofthin films and scattering thereby were reduced, it is found that thepresent invention exerts an excellent effect to remarkably reduce theincidence of particle production in products with thin films such aswiring material formed on substrates.

Although the present invention is described mainly for the sputteringmethod and apparatus, it is not restricted to these examples and can beapplied to other thin-film formation methods such as Physical VaporDeposition (PVD) and Chemical Vapor Deposition (CVD) and Apparatus. Inaddition, while the present invention is illustrated based on the aboveexample, they are merely examples, and it will be obvious that variouschanges and modifications may be made without departing from the scopeof the present invention. All these changes and modifications areincluded in the scope of the present invention.

The present invention has the excellent effect of preventing peeling ofdeposits formed on the surface of the inner walls of the thin-filmformation apparatus and the members inside the apparatus and ofsuppressing particle production without contamination of the inside ofthe apparatus.

What is claimed is:
 1. A method of manufacturing thin-film formationapparatus having surfaces on which unnecessary thin films are depositedduring sputtering, comprising the steps of: subjecting at least aportion of said surfaces to masking; subjecting said portion of saidsurfaces to etching processing after masking said surfaces; and removingsaid masking after said etching processing in order to provide saidsurfaces with unevenness; wherein, after said etching processing, saidportion of said surfaces which have been subjected to etching processinghas a center line surface roughness (Ra) in a range of about 5 to aboutless than 100 μm; and wherein said etching processing forms a pluralityof concave and convex parts on said portion of said surfaces, andwherein one of said plurality of concave parts and said plurality ofconvex parts is formed regularly at constant intervals on said portionof said surfaces.
 2. A method of manufacturing thin-film formationapparatus having surfaces on which unnecessary thin films are depositedduring sputtering, comprising the steps of: subjecting at least aportion of said surfaces to masking; subjecting said portion of saidsurfaces to etching processing after masking said surfaces; and removingsaid masking after said etching processing in order to provide saidsurfaces with unevenness; wherein, after said etching processing, saidportion of said surfaces which have been subjected to etching processinghas a center line surface roughness (Ra) in a range of about 5 to aboutless than 100 μm; and wherein said etching processing forms a pluralityof concave and convex parts on said portion of said surfaces, andwherein one of said concave and convex parts is formed about 1 to about100,000 per unit area (1 mm²) on said portion of said surfaces which hasbeen subjected to etching processing.
 3. A method according to claim 1,wherein one of said concave and convex parts is formed about 1 to about100,000 per unit area (1 mm²) on said portion of said surfaces which hasbeen subjected to etching processing.
 4. A method of manufacturingthin-film formation apparatus having surfaces on which unnecessary thinfilms are deposited during sputtering, comprising the steps of:subjecting at least a portion of said surfaces to masking; subjectingsaid portion of said surfaces to etching processing after masking saidsurfaces; and removing said masking after said etching processing inorder to provide said surfaces with unevenness; wherein, after saidetching processing, said portion of said surfaces which have beensubjected to etching processing has a center line surface roughness (Ra)in a range of about 5 to about less than 100 μm; and wherein saidetching processing forms a plurality of concave and convex parts on saidportion of said surfaces; wherein each of said concave parts is a recessformed in said surface, said recesses having an average diameter;wherein each of said convex parts is located adjacent to at least oneconcave part and has a top surface, said top surfaces having an averagediameter; and wherein one of said average diameter of said recesses andsaid average diameter of said top surfaces is about 3 to about 1000 μm.5. A method according to claim 1, wherein each of said concave parts isa recess formed in said surface, said recesses having an averagediameter; wherein each of said convex parts is located adjacent to atleast one concave part and has a top surface, said top surfaces havingan average diameter; and wherein one of said average diameter of saidrecesses and said average diameter of said top surfaces is about 3 toabout 1000 μm.
 6. A method according to claim 2, wherein each of saidconcave parts is a recess formed in said surface, said recesses havingan average diameter; wherein each of said convex parts is locatedadjacent to at least one concave part and has a top surface, said topsurfaces having an average diameter; and wherein one of said averagediameter of said recesses and said average diameter of said top surfacesis about 3 to about 1000 μm.
 7. A method according to claim 3, whereineach of said concave parts is a recess formed in said surface, saidrecesses having an average diameter; wherein each of said convex partsis located adjacent to at least one concave part and has a top surface,said top surfaces having an average diameter; and wherein one of saidaverage diameter of said recesses and said average diameter of said topsurfaces is about 3 to about 1000 μm.
 8. A method according to claim 1,wherein said surfaces of the thin-film formation apparatus which aresubjected to said etching processing include at least one surfaceselected from the group consisting of an inner wall of the thin-filmformation apparatus, a peripheral part of a substrate located within thethin-film formation apparatus, a peripheral part of a shield locatedwithin said thin-film formation apparatus, a peripheral part of abacking plate located within the thin-film formation apparatus, aperipheral part of a shutter located within said thin-film formationapparatus, a peripheral part of target located within the thin-filmformation apparatus, and a peripheral part of a supporting devicelocated within said thin-film formation apparatus.
 9. A method accordingto claim 2, wherein said surfaces of the thin-film formation apparatuswhich are subjected to said etching processing include at least onesurface selected from the group consisting of an inner wall of thethin-film formation apparatus, a peripheral part of a substrate locatedwithin the thin-film formation apparatus, a peripheral part of a shieldlocated within said thin-film formation apparatus, a peripheral part ofa backing plate located within the thin-film formation apparatus, aperipheral part of a shutter located within said thin-film formationapparatus, a peripheral part of a target located within the thin-filmformation apparatus, and a peripheral part of a supporting devicelocated within said thin-film formation apparatus.
 10. A methodaccording to claim 4, wherein said surfaces of the thin-film formationapparatus which are subjected to said etching processing include atleast one surface selected from the group consisting of an inner wall ofthe thin-film formation apparatus, a peripheral part of a substratelocated within the thin-film formation apparatus, a peripheral part of ashield located within said thin-film formation apparatus, a peripheralpart of a backing plate located within the thin-film formationapparatus, a peripheral part of a shutter located within said thin-filmformation apparatus, a peripheral part of a target located within thethin-film formation apparatus, and a peripheral part of a supportingdevice located within said thin-film formation apparatus.